Veröffentlichungen Halbleitertechnik 2012 21 bis 25 von 25 EinträgenJunige, M.; Geidel, M.; Knaut, M.; Albert, M.; Bartha, J.W.: Basic investigations of ruthenium’s ALD growth initiation. In: AVS 12th International Conference on Atomic Layer Deposition : June 17 – 20, 2012, Dresden, Germany. Dresden, 2012 Poster (2012)Junige, M.; Geidel, M.; Knaut, M.; Albert, M.; Bartha, J.W.: Atomic layer deposition monitored and characterized by joint in situ real-time spectroscopic ellipsometry and direct surface analysis. In: AVS 59th Annual International Symposium and Exhibition : October 28 – November 02, 2012, Tampa, Florida, USA. Tampa, Florida, 2012 Vortrag (2012)Geidel, M.; Hossbach, C.; Knaut, M.; Albert, M.; Bartha, J.W.: In-situ analysis of Al2O3 ALD growth on PET and PEN substrates for flexible organic electronics. In: 12th International Conference on Atomic Layer Deposition AVS-ALD & Baltic ALD 2012: June 18 – 20, 2012, Dresden, Germany. Vortrag (2012)Henke, T.; Hossbach, C.; Knaut, M.; Geidel, M.; Singh, A.; Albert, M.; Bartha, J.W.: Densification of Low-Temperature ALD Aluminum Oxide Thin Films by in-situ Flash Annealing. In: Proceedings of AVS 12th International Conference on Atomic Layer Deposition, June 17 – 20, 2012, Dresden, Germany (2012)Knaut, M.; Junige, M.; Wojcik, H.; Neumann, V.; Hiess, A.; Henke, T.; Albert, M.; Bartha, J.W.; Hoßbach, C.: Atomic layer deposition for high aspect ratio through silicon vias. In: Materials for Advanced Metallization 2012, Grenoble, France (2012)Zurück 1 2 3 Diese Informationen werden vom Vorgängersystem FIS bereitgestellt.