Diploma Thesis / Project Work / Bachelor- and Master-Thesis

Requests and topic assignment for

  • Study Works
  • Diploma Thesis
  • Project Works
  • Bachelor-/Master-Thesis

at the Chair of Nanoelectronics are handled by:

Dr. Volker Neumann
E-Mail: Dr. Volker Neumann

or you can contact the topic supervisors directly.

Topic and Description Supervisor
Single processes and process integration for the fabrication of vertical graphene based transistors for RF- and optoelectronics applications Dr. Carsten Strobel
Installation and commissioning of an in vacuo four-point measuring station (4 point probe) for resistance measurement of thinnest layers without vacuum break Dr. Martin Knaut
Development and comparison of PEALD processes for the production of metal nitride films and investigation on the film growth using in situ measurement techniques Dr. Martin Knaut
Process development for the fabrication of Indium Gallium Zinc Oxide (IGZO) based devices Dr. Benjamin Max
Fabrication and characterization of reconfigurable 2D transistors Dr. André Heinzig

Electrochemical investigation of Ru surfaces by underpotential deposition of copper ions

  • Despite being a noble metal ruthenium has a high affinity towards oxygen. So, sorption of oxygen-species, so-called “surficial oxides”, is possible. The extension of coverage can be quantified by underpotential deposition of copper ions (Cu-UPD) resulting in sub-monomolecular coverage.

  • The Cu-UPD investigation can be combined with other electrochemical methods or with spectroscopic studies.

 Dr. Volker Neumann

Electrolytic hydrogen incorporation into silicon single crystals

  • Hydrogen (H2) can be incorporated into silicon single crystals by electro­chemical means. According to literature one opportunity is cyclic voltammetry (CV) using silicon single crystal (Si wafer specimen) as the cathode, platinum as the counter and hydrogen electrode as the reference electrode. These CV experiments are carried out in fluoric acid solutions in PTFE vessels. The amount of incorporation is obviously dependent on the type of Si crystallization as well as on the level and type of doping and can be measured by physical methods like Raman scattering.
 Dr. Volker Neumann

Regarding student topics at the NaMLab gGmbH, please contact:

Dr. Stefan Schmult
E-Mail: Dr. Stefan Schmult

About this page

Christian Olszowa
Last modified: Mar 26, 2024