Veröffentlichte Journale 2013 https://tu-dresden.de/ing/elektrotechnik/ihm/hlt/forschung/publikationen-1/journale/veroeffentlichte-journale-2013 https://tu-dresden.de/logo.png Veröffentlichte Journale 2013 1 bis 10 von 10 EinträgenSingh, A.; Klumbies, H.; Schröder, U.; Müller-Meskamp, L.; Geidel, M.; Knaut, M.; Hoßbach, C.; Albert, M.; Leo, K.; Mikolajick, T.: Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations. In: Appl. Phys. Lett. 103, 233302 (2013)Vasilev, B.; Bott, S.; Rzehak, R.; Liske, R.; Bartha, J. W.: A method for characterizing the pad surface texture and modeling its impact on the planarization in CMP. In: Microelectronic Engineering 104 (2013), S. 48–57Lotin, A.A.; Novodvorsky, O.A.; Khramova, O.D.; Parshina, L.S.; Lebedev, F.V.; Bartha, J.W.; Wenzel, C.: Influence of growth temperature on physical properties of ZnO films produced by pulsed laser deposition method. In: Optical Materials 35 (2013), Nr. 8, S. 1564–1570Kubasch, C.; Bartha, J.W.: Water uptake of a low-k dielectric film: Combining capacitance and gravimetric measurements. In: Microelectronic Engineering 106 (2013), S. 177–181Knaut, M.; Junige, M.; Neumann, V.; Wojcik, H.; Henke, T.; Hossbach, C.; Hiess, A.; Albert, M.; Bartha, J.W.: Atomic layer deposition for high aspect ratio through silicon vias. In: Microelectronic Engineering 107 (2013), S. 80–83Geidel, M.; Junige, M.; Albert, M.; Bartha, J.W.: In-situ analysis on the initial growth of ultra-thin ruthenium films with atomic layer deposition. In: Microelectronic Engineering 107 (2013), S. 151–155Woijcik, H.; Hossbach, C.; Kubasch, C.; Verdonck, P.; Barbarin, Y.; Merkel, U.; Bartha, J. W.; Hübner, R.; Engelmann, H.-J.; Friedemann, M.: Enhanced growth and Cu diffusion barrier properties of thermal ALD TaNC films in Cu/low-k interconnects. In: Microelectronic Engineering 110 (2013), S. 29–34Vasilev, B.; Bott, S.; Rzehak, R.; Bartha, J. W.: Pad roughness evolution during break-in and its abrasion due to the pad-wafer contact in oxide CMP. In: Microelectronic Engineering 111 (2013), S. 21–28Lüssem, B.; Tietze, M. L.; Kleemann, H.; Hossbach, C.; Bartha, J. W.; Zakhidov, A.; Leo, K.: Doped organic transistors operating in the inversion and depletion regime. In: Nature Communications 4 (2013), Nr. Article number: 2775Dirnstorfer, D.; Mähne, H.; Mikolajick, T.; Knaut, M.; Albert, M.; Dubnack, K.: Atomic layer deposition of anatase TiO2 on porous electrodes for dye-sensitized solar cells. In: J. Vac. Sci. Technol. A31, 01A116 (2013) (2013)Diese Informationen werden vom Vorgängersystem FIS bereitgestellt.