Research fields

Atomic Layer Processing (ALD)

Thermal, plasma and flash lamp assisted atomic layer deposition (ALD) and atomic layer etching (ALE) with in situ and in vacuo layer/growth characterization and process monitoring (QCM, XPS, AFM, ellipsometry)
Fundamental investigations on layer growth during atomic layer deposition of metals, insulators and functional layers

Fabrication and characterization of reconfigurable devices based on 2D materials
Non-volatile devices for neuromorphic computing with 2D materials (_MoS2, _WSe2, hBN, graphene)

Integration of various novel functional elements (transistors, memristors, ...) for the development of an active back-end-of-line for future semiconductor technology
Design/architecture and processing of three-dimensional and vertically integrated devices
Manufacturing and optimization of contacts, vertical/horizontal wiring and interconnects

Electrolytic deposition from an electrolyte droplet (meniscus confined electrochemical deposition, MCED) - co-development of an MCED module, optimization of the electrolyte composition for the MCED of copper and gold structures
Structured metal deposition on quartz glass wafers for the construction of a multilayer board for high-frequency applications: copper microstructuring by photolithography and etching processes as well as electroless plating with nickel and gold (ENIG)
Application and further development of electroanalytical examination methods (CV/CVS, EIS, RDE, SDC)
Development of etching processes

Material development and characterization for non-volatile memristive capacitor cells and their application as memory or logic-in-memory unit

Fabrication of neurotransistor-based crossbar structures with memcapacitive/memristive properties for biologically inspired computing
IGZO-based transistors/memristors
3D integration
Reliability analysis of novel semiconductor devices