ALDRAM

Optimized ALD processes for high-k RRAM cells (ALDRAM)

Funded by
Taiwan/European Semiconductor Manufacturing Company Limited (TSMC/ESMC)
Project sponsor
Taiwan/European Semiconductor Manufacturing Company Limited (TSMC/ESMC)
Funding amount
360.000€
Duration
2026-2028
Project number
Joint Development Project
Cooperation partner
TSMC
Contact person(s)
Dr. Martin Knaut, Dr. Carsten Strobel

This project investigates the tailoring of resistive switching behavior in VCM-RRAM fabricated by atomic layer deposition (ALD) by varying the process chemistry and parameters. Using in-situ measurement techniques and electrical characterization, correlations between the fabrication parameters and the switching behavior (programming voltage, on/off ratio, retention and lifetime) are determined. Initially, commercial precursors and standard electrodes (TiN, TaN, Pt) will be used for this purpose, while later experiments will incorporate novel precursors developed and provided as part of a collaboration with the Chair of Materials Chemistry. In a second project phase, the analysis will be extended to electrode effects and the incorporation of dopants in order to optimize the performance of the RRAM stack.