UHFO
ERDF R&D project UHFO “Development of a UHF Microwave Source Array for the Optimized Generation of Industrial Plasmas with Controllable Substrate Bombardment”
Innovative plasma technologies lay the foundation for semiconductors with enhanced capabilities and modern manufacturing processes. As part of the UHFO research project, researchers from the Chair of Nanoelectronics at TU Dresden are collaborating with FAP GmbH to develop a new generation of microwave plasma sources.
The goal of the project is to make coating processes more precise and efficient. To this end, a novel plasma source is being developed that allows for ion bombardment of the substrate to be controlled in a targeted manner. This will enable the properties of thin films to be tailored even more precisely to different applications in the future. Another focus is on the high-rate deposition of particularly thick silicon layers. This is expected to open up new possibilities for coating complex components, such as those used in semiconductor machinery.
Both the scientific community and industry will benefit equally from the research findings. Together with the industry partner, the technology is being further developed for industrial use while simultaneously advancing research into innovative coating processes. The insights gained are also incorporated into teaching at TU Dresden, strengthening the education of future engineers.
The project runs from July 2026 to June 2028 and is funded by the European Regional Development Fund (ERDF) and the Free State of Saxony.
Argon plasma on experimental carrier