Abschlussarbeiten - Master
Untersuchung und Optimierung von flüssigpräparierten organischen Gate-Isolatoren für organische Feldeffekttransistoren auf flexiblen Trägern
Art der Abschlussarbeit
Master
Autoren
- Yang, Shuo
Betreuer
- Prof. Dr.-Ing. Andreas Richter
- Dr.-Ing. Matthias Plötner
Abstract
The main purpose of this project was to optimize the dielectric properties of polymer
gate insulators for organic field-effect transistors on flexible substrates. Attempts with
different process parameters were carried out to manufacture gate insulator layers.
Poly(methylmethacrylat/4-benzoylphenylmethacrylat) (P(MMA84/BPMA16)) and
Poly(methylmethacrylat/propargylmethacrylat) (P(MMA84/PgMA16)) were as main
gate insulators employed, along with 1,3,5-Tris(azidomethyl)benzen (TAMB) as
crosslinker for P(MMA84/PgMA16). n-Butylacetat (nBA), Anisol and Methylethylketon
(MEK) were adapted as solvents with varies concentrations. 15 different solutions were
deposited on substrate by using Spin-On technique with different process parameters,
including: spin speed, number of layers as well as conditions by crosslinking.
PEDOT:PSS and Silver nanoparticales were both applied as Top-Gate materials by
applying print technique. The process parameters were firstly tested in MIM structures.
Only a few optimal experiment parameters were selected to produce organic field-effect
transistors.
The best dielectric strength turned out to be 4.2 MV/cm from double layer of
P(MMA84/BPMA16) with a thickness of 230 nm. The highest mean relative permittivity
achieved 3.2, which was also from P(MMA84/BPMA16) with UV crosslinking by 254
nm wavelength for 5 J/cm2. By applying optimal parameters onto different substrates,
a transistor based on polyimide/Glas-substrat shown an electron mobility of 7.7x10-2
cm2/Vs. The value of the threshold voltage was 5.1 V. The Ion/Ioff ratio was 470.
gate insulators for organic field-effect transistors on flexible substrates. Attempts with
different process parameters were carried out to manufacture gate insulator layers.
Poly(methylmethacrylat/4-benzoylphenylmethacrylat) (P(MMA84/BPMA16)) and
Poly(methylmethacrylat/propargylmethacrylat) (P(MMA84/PgMA16)) were as main
gate insulators employed, along with 1,3,5-Tris(azidomethyl)benzen (TAMB) as
crosslinker for P(MMA84/PgMA16). n-Butylacetat (nBA), Anisol and Methylethylketon
(MEK) were adapted as solvents with varies concentrations. 15 different solutions were
deposited on substrate by using Spin-On technique with different process parameters,
including: spin speed, number of layers as well as conditions by crosslinking.
PEDOT:PSS and Silver nanoparticales were both applied as Top-Gate materials by
applying print technique. The process parameters were firstly tested in MIM structures.
Only a few optimal experiment parameters were selected to produce organic field-effect
transistors.
The best dielectric strength turned out to be 4.2 MV/cm from double layer of
P(MMA84/BPMA16) with a thickness of 230 nm. The highest mean relative permittivity
achieved 3.2, which was also from P(MMA84/BPMA16) with UV crosslinking by 254
nm wavelength for 5 J/cm2. By applying optimal parameters onto different substrates,
a transistor based on polyimide/Glas-substrat shown an electron mobility of 7.7x10-2
cm2/Vs. The value of the threshold voltage was 5.1 V. The Ion/Ioff ratio was 470.
Schlagwörter
-
Berichtsjahr
2017