Abschlussarbeiten - Master
Developement of anisotropic diamond etching processes needed for miniaturized diamond quantum sensor
Art der Abschlussarbeit
Master
Autoren
- Khan, Sana
Betreuer
- Prof. Dr. rer. nat. Johann Wolfgang Bartha
- Dr. rer. nat. Ulrich Künzelmann
Weitere Betreuer
Dr. Rölver (Robert Bosch GmbH)
Abstract
This master thesis aims to develop a process to obtain high etch rate of diamond with
homogeneous surface prole. With this objective ICP RIE (inductively coupled plasma
reactive ion etching) process as well as wet annealing on diamond were performed. In the
wet annealing process a thermochemical reaction between deposited Ni lm on diamond
aided for removal of carbon and an etch rate of 3.2 m/min with a surface roughness of 4-7
m was obtained. The inductively coupled plasma reactive ion etching procedure delivered
an etch rate of 260 nm/min and surface roughness of 5-10 nm post etching which was indeed
comparable with the unetched diamond surface. The eect of addition of
uorine during
ICP RIE process where O2/Ar were used as reactant gases was also studied. Moreover, an
optimum hard mask material was ascertained and successful lithography procedure for the
hard mask material was established using positive as well as image reversal photoresist.
homogeneous surface prole. With this objective ICP RIE (inductively coupled plasma
reactive ion etching) process as well as wet annealing on diamond were performed. In the
wet annealing process a thermochemical reaction between deposited Ni lm on diamond
aided for removal of carbon and an etch rate of 3.2 m/min with a surface roughness of 4-7
m was obtained. The inductively coupled plasma reactive ion etching procedure delivered
an etch rate of 260 nm/min and surface roughness of 5-10 nm post etching which was indeed
comparable with the unetched diamond surface. The eect of addition of
uorine during
ICP RIE process where O2/Ar were used as reactant gases was also studied. Moreover, an
optimum hard mask material was ascertained and successful lithography procedure for the
hard mask material was established using positive as well as image reversal photoresist.
Schlagwörter
-
Berichtsjahr
2019