Dr.-Ing. Benjamin Max

Group leader

Mr Dr.-Ing. Benjamin Max

Semiconductor processes, devices and integration

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Contact Information

work

Visiting address:

Mierdel-Bau, Room 206 Nöthnitzer Str. 64

01187 Dresden

https://tu-dresden.de/ing/elektrotechnik/ihm/NEM/die-professur/beschaeftigte/benjamin-max

Research area

Resistive and ferroelectric switching effects in HfO₂/HZO-based devices, e.g. combined filamentary/ferroelectric switching in RRAM/FeRAM capacitors and bi-layer ferroelectric tunnel junctions (FTJs)
Design/Layout, fabrication (PVD, ALD) and physical/electrical characterization of capacitor test structures
Investigation of biologically inspired computing in memristive crossbar arrays
- neuromorphic behaviour of HZO-based FTJs for application in spiking neural networks (depression/potentiation, STDP, ...)
- neuromorphic computing in transistor crossbar arrays with functionalized memcapacitive NbO_x/AlO_x gate oxide
Monolithic 3D integration of semiconductor devices, e.g. metal oxide semiconductors based on IGZO
Quantum-dot based flash memory cells (QD-Flash)

Thin film technologies: PVD, CVD, ALD
Wet chemistry
Lithography
Electrical measurement setups + characterization: (pulsed) I-V, C-V, resistive/ferroelectric measurements, e.g. P-V hysteresis, endurance, retention, temperature dependent current transport mechanisms
High temperature processing: dry/wet oxidation, doping by diffusion, annealing
Scanning probe microscopy: AFM/PFM

Seminar for undergraduate students (German)
- ET1 "Basics of Electrical Engineering"
- ET2 "Electrical and magnetic fields"
- ET3 "Dynamic networks"
Seminar "Electrical Engineering for undergraduates of Mechanical Engineering" (German)
Seminar and practical course "Memory Technology" (English)
Practical course "Semiconductor Technology" (German + English)