Subproject A06

2^nd Funding Period

Ferecrystals: Non-Epitaxial Layered Intergrowths of 2D Materials by Atomic Layer Deposition

The project will prepare a material class of stacked topological insulators (TIs) and non-vdW 2DMs, called ferecrystals, by atomic layer deposition (ALD). As a basis, thin films of TIs (< 10 nm) have been selected due to their 2D nature and superior electronic properties, like high mobility of the charge carriers due to highly conductive crystal interfaces. We will start a new avenue by the growth of ferecrystals based on TIs and conductive organic interlayers. For both ferecrystal systems, we will develop measurement platforms for the cross-plane transport of thermoelectric properties.

1^st Funding Period

Ferecrystals: Nonepitaxial Layered Intergrowths of 2D Materials by Atomic Layer Deposition

The project will aim to prepare a material class of stacked metal monochalcogenides (MMCs), topological insulators (TIs) and/or transition metal dichalcogenides (TMDCs) called ferecrystals via atomic layer deposition (ALD). The selected base systems will consist of TMDCs such as TiSe₂ or NbSe₂, TI materials such as Bi₂Se₃ or Sb₂Te₃ and cubic MMCs such as CdSe, ZnSe, TeS or SnSe. Furthermore, investigation of the structural ordering of the heterostructures and their properties in electric and magnetic fields will be addressed.

Principal investigator

Prof. Dr. Kornelius Nielsch