Publications

251 bis 260 von 284 Einträgen

M., Stangl; J., Acker; V. , Hoffmann; V. , Wetzig; U., Künzelmann; J.W., Bartha: Application of the Copper Damascene Process for the Preparation of Electromigration Test Structures. In: Int. Conf. Planarization/CMP Technology (ICPT) (2007), S. 331–336

D., Schmidt; S., Strehle; M., Albert; S., Teichert; B., Hintze; W., Hentsch; J.W., Bartha: Ternary Ta(Al)N ALD Films using Tantalum Precursors and TMA as additional Reducing Agent. In: Agent. Proc. AVS ALD Conf., San Diego (US) avail, online (2007)

S., Nawka; E., Erben; B., Adolphi; J.W., Bartha: Characterization of the initial growth of hafnium silicate films in dependence of process parameters and substrate materials. In: Proc. EMRS Fall-Meet., Warschau (PL) (2007)

S., Menzel; D., Reitz; U., Künzelmann; M., Albert; J.W., Bartha: Fabrication of Surface Acoustic Wave Structures with buried Copper IDTs using the Copper Damascene Process. In: Tag.-Bd. Int. Conf. Planarization/CMP Technology (ICPT) (2007), S. 479–485

S., Menzel; C., Hossbach; J., Thomas; M., Albert; T., Gemming; M., Stangl; S., Hampel: ALD of Ta-based Adhesion Layers for CNT-Cu Matrix Composite Film Growth. In: Proc. MSR Spring Meet., San Francisco (US) (2007)

K., Richter; C., Kubasch; J.W., Bartha: Micro-patterned silicon surfaces for biomedical devices. In: Plasma Process. Polym. 4 (2007), S. 411–415

D., Reitz; J., Thomas; H., Schmidt; S., Menzel; K., Wetzig; M., Albert; J.W., Bartha: Dama¬scene technique applied to surface acoustic wave devices. In: J. Va. Sci. Technol. 25 (2007), S. 271–276

S., Menzel; D., Schmidt: Oberflächenwellen-Strukturen in Cu-Damaszentechnologie. In: Vakuum in der Forschung und Praxis 19 (2007), S. 4

Hellriegel, R.; Albert, M.; Hintze, B.; Winzig, H.; Bartha, J.W.: Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications. In: Microelectronic Engineering 84 (2007), S. 37–41

Schmidt, D.; Hossbach, C.; Albert, M.; Bartha, J.W.; Menzel, S.: In-Situ Metrology for improved Atomic Layer Deposited TaN Properties by Supplying Additional Energy. In: Agent. Proc. AVS ALD Conf., San Francisco (US) avail, online (2006)

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Martin Knaut
Last modified: Oct 05, 2022