Publications

261 bis 270 von 284 Einträgen

Novodvorski, O.A.; Panchenko, V.Ya.; Chramova, O.D.; Gorbatenko, L.S.; Butorina, Ye.A.; Wenzel, C.; Bartha, J.W.: Optical and structural characteristics of ZnO filmsdoped with Ga. In: SPIE 6161 6161 (2006), S. OH1–OH10

Reitz, D.; Heuer, H.; Baunack, S.; Hübner, R.; Hoffmann, V.; Menzel, S.; Wenzel, C.; Wetzig, K.: Investigation of a Ta-Si-O/Ta-Si-N bilayer system for embedded SAW finger structures. In: Microelectronic Engineering 82 82 (2006), S. 301–306

Hübner, R.; Hecker, M.; Mattern, N.; Hoffmann, V.; Wetzig, K.; Heuer, H.; Wenzel, C.; Engelmann, H.-J.; Gehre, D.; Zschech, E.: Effect of nitrogen content on the degradation mechanisms of thin Ta-Si-N diffusion barriers for Cu metallization. In: Thin Solid Films 500 500 (2006), S. 259–267

Heuer, H.; Wenzel, C.; Herrmann, D.; Hübner, R.; Chang, Z.L.; Bartha, J.W.: Thin tantalum-silicon-oxygen/tantalum-silicon-nitrogen films as high efficiency humidity diffusion barriers for solar cell encapsulation. In: Thin Solid Films 515 (2006), S. 1612–1617

Reitz, D.; Heuer, H.; Baunack, S.; Hübner, R.; Hoffmann, V.; Menzel, S.; Wenzel, C.; Wetzig, K.: Investigation of a Ta–Si–O/Ta–Si–N bilayer system for embedded SAW finger structures. In: Microelectronic Engineering 82 (2005) (2005), S. 301–306

Hübner, R.; Reiche, R.; Hecker, M.; Mattern, N.; Hoffmann, V.; Wetzig, K.; Heuer, H.; Wenzel, C.; Engelmann, H.-J.: Void formation in the Cu layer during thermal treatment of SiNx/Cu/Ta73Si27/SiO2/Si systems. In: Cryst. Res. Technol. 40, No. 1/2 (2005), S. 135–142

Albert, M.; Terasa, R.; Kuske, J.: VHF Linear Plasma Source for Large Area Deposition of Amorphous and Multicrystalline Silicon Solar Cells. In: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, 6.-10.06.2005 (2005)

Hübner, R.; Hecker, M.; Mattern, N.; Hoffmann, V.; Wetzig, K.; Heuer, H.; Wenzel, C.; Engelmann, H.j.; Zschech, E.: Degradation mechanism of thin Ta-Si-N diffusion barriers for Cu interconnects. In: Proceedings ICMAT 2005, 3.-8. Juli , Singapore (2005)

Hübner, R.; Hecker, M.; Mattern, N.; Hoffmann, V.; Wetzig, K.; Heuer, H.; Wenzel, C.; Engelmann, H.-J.; Gehre, D.; Zschech, E.: Effect of nitrogen content on the degradation mechanisms of thin Ta–Si–N diffusion barriers for Cu metallization. In: Thin Solid Films 497 (2006) in press (2005)

Hellriegel, R.; Hintze, B.; Winzig, H.; Albert, M.; Bartha, J. W.: High Density ALD Titanium Nitride (TiN) layer etch using Argon/NF3/Cl2 Mixtures Utilizing a Remote Plasma Source (RPS) for ALD/CVD Chamber Clean Application. In: AVS 5th International Conference on Atomic Layer Deposition, San Jose, 8.-10.08.2005 (2005)

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Martin Knaut
Last modified: Oct 05, 2022