For the first time, scientists of the Center for Advancing Electronics Dresden (cfaed) have realized an inversion transistor based on organic semiconductors. The inversion field effect transistor is the basic device of modern silicon based microelectronics and is nowadays produced more than a billion times in mobile phones and computers. Doping of organic semiconductors - which is already used successfully in organic light emitting diodes for displays in mobile phones - was the key to this invention. The breakthrough was reported in the last edition of internationally recognized journal “Nature Communication”.

Until recently, doping was not used in organic transistors. “It has been assumed that doping either causes a deterioration of the transistor parameters, or that it is even not possible to realize organic inversion transistors.” explains Dr. Björn Lüssem, head of the New Devices group of the Institut für Angewandte Photophysik (IAPP) of the Technische Universität (TU) Dresden, connected to the new cluster of excellence for microelectronics cfaed. However, organic doping can indeed be used in organic transistors. “The operating parameters can be precisely tuned in doped transistors” summarizes Dr. Lüssem.

Organic circuits are flexible and can be processed on large areas. Nowadays, they are already used to control larger displays. Furthermore, medical applications and flexible sensors are envisioned.

“The first realization of an organic inversion transistor is a breakthrough for the field of organic electronics” rejoices Prof. Karl Leo, director of the IAPP. “It shows the innovative strength of the TU Dresden in the information technologies and demonstrates that the cluster of excellence cfaed facilitates new cutting edge research. This success could only be achieved by close collaboration between our research and local industry, in particular by cooperation with the Novaled AG.”

Further enquiries:
IAPP, Max L. Tietze, phone+49 351 463-32748,
cfaed, Birgit Holthaus, phone +49 351 463 42848,